Authors E. Farrés, X. Aymerich, J. Suñé, i M. Nafría Citation Key 287 COinS Data Date Published 1991 Pagination 407-414 Journal Journal of Physics D: Applied Physics Volume 24 Year of Publication 1991 ← Reversible dielectric breakdown of thin gate oxides in MOS devices → Injected Charge to Recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric