Accession Number
12216290
Authors
A. Bayerl, G. Benstetter, F. Campabadal, X. Aymerich, M. Nafría, M. Porti, i M. Lanza
Citation Key
315
COinS Data

Date Published
SEP 2011
DOI
10.1109/TDMR.2011.2161087
ISBN Number
819UO
ISSN
1530-4388
Keywords
Atomic force microscopy (AFM); high-k crystallization; high-k dielectric; MOS devices; variability
Issue
3
Pagination
495-501
Journal
IEEE Transactions on Device and Materials Reliability
Start Page
495
Type of Article
Article; Proceedings Paper
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5936690
Volume
11
Year of Publication
2011