Authors
A. Fontsere, M. Nafría, M. Lanza, A. Bayerl, M. Porti, V. Iglesias, J. C. Moreno, Y. Cordier, S. Chenot, N. Baron, J. Llobet, M. Placidi, i A. Perez-Tomas
Citation Key
373
COinS Data

Date Published
August 2012
DOI
10.1063/1.4748115
ISSN
0003-6951
Keywords
AFM, aluminium compounds, Atomic force microscopy, Dielectric Breakdown, dielectric materials, element semiconductors, field emission, gallium compounds, high electron mobility transistors, III-V semiconductors, leakage currents, nanotechnology, reliabili
Issue
9
Pagination
093505-093505-4
Journal
Applied Physics Letters
Start Page
093505
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6291673&sortType%3Ddesc_p_Publication_Year%26queryText%3DV.+Iglesias
Volume
101
Year of Publication
2012