Accession Number
WOS:000328588000017
Authors
A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, i J. Martín-Martínez
Citation Key
379
COinS Data

Date Published
NOV 2013
DOI
10.1016/j.microrel.2013.07.046
ISSN
0026-2714
Keywords
breakdown reversibility, BREAKDOWN; CONDUCTION; dielectric Breakdown, CMOS, high-k, MOS technology, reliability, resistive switching, Ultra-thin dielectric gate stacks
Issue
9-11
Pagination
1247-1251
Journal
MICROELECTRONICS RELIABILITY
Start Page
1247
Type of Article
Article
URL
http://www.sciencedirect.com/science/article/pii/S0026271413002217
Volume
53
Year of Publication
2013