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- Accession Number
- WOS:000350568900006
- Authors
- A. Pérez-Tomás, Y. Cordier, M. Nafría, M. Porti, S. Chenot, M. Chmielowska, M. Placidi, Y. K. Sharma, C. A. Fisher, M. Thomas, M. R. Jennings, P. M. Gammon, H. Chen, V. Iglesias, A. Fontsere, i G. Catalán
- Citation Key
- 401
- COinS Data
- Date Published
- 20 MARCH 2015
- DOI
- 10.1088/0957-4484/26/11/115203
- ISBN Number
- 1361-6528
- ISSN
- 0957-4484
- Keywords
- LIGHT-EMITTING-DIODES; MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; ALGAN/GAN HEMTS; GALLIUM NITRIDE; GAN; GROWTH; DISLOCATIONS; SUBSTRATE; SCHOTTKY
- Issue
- 11
- Journal
- NANOTECHNOLOGY
- Type of Article
- Article
- URL
- http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=2&SID=T2RNqQwde7r4jL3OUYv&page=1&doc=3
- Volume
- 26
- Year of Publication
- 2015