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- Accession Number
- WOS:000351751100042
- Authors
- Q. Wu, E. Simoen, X. Aymerich, M. Nafría, R. Rodríguez, J. Martín-Martínez, A. Bayerl, i M. Porti
- Citation Key
- 402
- COinS Data
- Date Published
- MARCH 2015
- DOI
- 10.1116/1.4913950
- ISSN
- 1071-1023
- Keywords
- CAFM, channel hot carriers, CHC, defect, defect density, device level, MOSFET SiGe, nanoscale, strained MOSFET, stress
- Issue
- 2
- Journal
- Journal of Vacuum Science & Technology B
- Type of Article
- Article
- URL
- http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=2&SID=T2RNqQwde7r4jL3OUYv&page=1&doc=4
- Volume
- 33
- Year of Publication
- 2015