Vés al contingut
- Accession Number
- WOS:000365614500011
- Authors
- M. Maestro, X. Aymerich, F. Campabadal, M. Nafría, R. Rodríguez, J. Martín-Martínez, M B González, A. Crespo-Yepes, i J. Díaz
- Citation Key
- 417
- COinS Data
- Date Published
- January 2016
- DOI
- 10.1016/j.sse.2015.08.010
- ISSN
- 0038-1101 / eISSN(1879-2405)
- Keywords
- RRAM DEVICES; HFO2 RRAM; VARIABILITY;Resistive switching; Random Telegraph Noise; Resolution; Time constants; RRAM
- Issue
- Subdivision B
- Pagination
- 140-145
- Journal
- SOLID-STATE ELECTRONICS
- Start Page
- 140
- Type of Article
- Paper
- URL
- http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=5&SID=Y113B7XdUh6zQc9qpgR&page=1&doc=1
- Volume
- 115
- Year of Publication
- 2016