Accession Number
WOS:000400413200027
Authors
C. Couso, M. Nafría, N. Seoane, A. J. Garcia-Loureiro, J. Martín-Martínez, i M. Porti
Citation Key
434
COinS Data

Date Published
May 2017
DOI
DOI:10.1109/LED.2017.2680545
ISSN
0741-3106 (eISSN: 1558-0563)
Keywords
CAFM, HfO2, high-k, KPFM, MOSFET, NM, polycrystalline dielectric, SIMULATIONS, transistors
Pagination
637-640
Journal
IEEE Electron Device Letters
Start Page
637
URL
http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=W2AD7bZyrMVqntOuSYl&page=1&doc=1
Volume
38
Year of Publication
2017