Vés al contingut
- Accession Number
- 13356803
- Authors
- J. Martín-Martínez, X. Aymerich, M. Nafría, R. Rodríguez, i N. Ayala
- Citation Key
- 359
- COinS Data
- Date Published
- 2012
- DOI
- 10.1109/ICSICT.2012.6467575
- ISBN
- 978-1-4673-2474-8
- Keywords
- atomic level, bias temperature instability, BTI degradation, BTI related VT shifts, circuit aging evaluation, defect charge-discharge, design phase, discrete threshold voltage shift, field effect transistor, PDO model, probabilistic defect occupancy model
- Pagination
- 1-4
- Conference Location
- Xi'an, China
- Conference Name
- 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
- URL
- http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6467575
- Year of Conference
- 2012