Vés al contingut
- Accession Number
- 11697179
- Authors
- E. Amat, E. Simoen, P. Verheyen, M. Bauer, V. Machkaoutsan, X. Aymerich, M. Nafría, J. Martín-Martínez, M B González, i R. Rodríguez
- Citation Key
- 367
- COinS Data
- DOI
- 10.1109/ICSICT.2010.5667396
- ISBN Number
- 978-1-4244-5797-7
- Keywords
- channel hot carriers, channel hot-carriers degradation, CHC, circuit reliability, degradation, device performance, embedded source-drain, hot carriers, impact ionization, Integrated circuit reliability, MOSFET, MOSFETs, reliability, SiC, SiGe, silicon car
- Pagination
- 1648-1650
- Conference Location
- Shanghai, China
- Conference Name
- 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
- URL
- http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5667396
- Year of Conference
- 2010