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- Accession Number
- 13581558
- Authors
- A. Bayerl, E. Simoen, M B González, X. Aymerich, M. Nafría, E. Amat, V. Velayudhan, R. Rodríguez, M. Lanza, J Martín-Martínez, i M. Porti
- Citation Key
- 377
- COinS Data
- DOI
- 10.1109/IRPS.2013.6532039
- ISBN Number
- 978-1-4799-0111-1
- ISBN
- 978-1-4799-0112-8
- Keywords
- AFM, Atomic force microscopy, CHC degradation, ELECTRICAL CHARACTERIZATION, MOSFET, NBTI, SiO2-films, transistors
- Pagination
- 5D.4.1 - 5D.4.6
- Conference Location
- Anaheim, California, USA
- Publisher
- IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
- Conference Name
- 2013 IEEE International Reliability Physics Symposium (IRPS)
- URL
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6532039&sortType%3Ddesc_p_Publication_Year%26queryText%3DVelayudhan
- Year of Conference
- 2013