Accession Number
13581558
Authors
A. Bayerl, E. Simoen, M B González, X. Aymerich, M. Nafría, E. Amat, V. Velayudhan, R. Rodríguez, M. Lanza, J Martín-Martínez, i M. Porti
Citation Key
377
COinS Data

DOI
10.1109/IRPS.2013.6532039
ISBN Number
978-1-4799-0111-1
ISBN
978-1-4799-0112-8
Keywords
AFM, Atomic force microscopy, CHC degradation, ELECTRICAL CHARACTERIZATION, MOSFET, NBTI, SiO2-films, transistors
Pagination
5D.4.1 - 5D.4.6
Conference Location
Anaheim, California, USA
Publisher
IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Conference Name
2013 IEEE International Reliability Physics Symposium (IRPS)
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6532039&sortType%3Ddesc_p_Publication_Year%26queryText%3DVelayudhan
Year of Conference
2013