Authors D. Hill, X. Aymerich, M. Nafría, M. Porti, i X. Blasco Citation Key 252 COinS Data Date Published 2001 Pagination 1077-1079 Journal Microelectronics and Reliability Volume 41 Year of Publication 2001 ← Topographic characterization of AFM grown SiO2 on Si → Feasibility of the electrical characterization of single SiO2 breakdown spots using C-AFM