Authors M. Porti, B. Garrido, J. Carreras, X. Aymerich, M. Nafría, i M. Avidano Citation Key 228 COinS Data Date Published 2005 Journal Journal of Applied Physics Start Page 056101 Volume 98(5) Year of Publication 2005 ← New insights on the post-BD conduction of MOS devices at the nanoscale → Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics