Authors M. Lanza, X. Aymerich, M. Nafría, M. Porti, i V. Iglesias Citation Key 310 COinS Data Pagination 108 Journal Nanoscale Research Letters Volume 6 Year of Publication 2011 ← Conductive AFM analysis of the trapping properties of SiO2 tunnel layers for non-volatile memory devices → High-k dielectric polycrystallization effects on the nanoscale electrical properties of MOS structures