Authors M. Porti, X. Aymerich, i M. Nafría Citation Key 239 COinS Data Date Published 2003 Issue 4 Pagination 933-940 Journal EEE Transactions on Electron Devices Volume 50 Year of Publication 2003 ← Atomic Force Microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films → Electrical characterization and fabrication of SiO2 based MOS nanoelectronic devices with atomic force microscopy