Authors M. Nafría, X. Aymerich, D. Yélamos, i J. Suñé Citation Key 279 COinS Data Date Published 1996 Issue 12 Pagination 2215-2226 Journal IEEE Transactions on Electron Devices Volume 43 Year of Publication 1996 ← Breakdown of thin gate silicon dioxide films. A review → High field dynamic stress of thin SiO2 films