Authors M. Porti, S. Cimino, A. Paccagnella, A. Cester, X. Aymerich, i M. Nafría Citation Key 226 COinS Data Date Published 2005 Issue Part 2 Pagination 1457–1461 Journal IEEE Transactions on Nuclear Science Volume 52 (5) Year of Publication 2005 ← Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM → New insights on the post-BD conduction of MOS devices at the nanoscale