Authors M. Lanza, B. Hamilton, E. Wittaker, X. Aymerich, M. Nafría, i M. Porti Citation Key 160 COinS Data Date Published 2010 Journal Review of Scientific Instruments Start Page 106110 Volume 81 Year of Publication 2010 ← UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements → Recovery of the MOSFET and circuit functionality after the Dielectric Breakdown of Ultra-Thin High-k Gate Stacks.