Authors E. Amat, G. Groeseneken, X. Aymerich, M. Nafría, R. Rodríguez, R. Degraeve, i T. Kauerauf Citation Key 150 COinS Data Journal IEEE Transactions on Device and Materials Reliability, accepted for the publication. Year of Publication 2011 ← Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors → Conductivity and charge trapping after electrical stress in amorphous and polycristaline Al2O3 based devices studied with AFM related techniques