Authors M. Porti, X. Aymerich, M. Nafría, i M. C. Blüm Citation Key 247 COinS Data Date Published 2002 Issue 4 Pagination 94-101 Journal IEEE Transactions on Device and Materials Reliability Volume 2 Year of Publication 2002 ← Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy → Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides