Authors M. Porti, X. Aymerich, i M. Nafría Citation Key 234 COinS Data Date Published 2004 Pagination 29-33 Journal Microelectronic Engineering Volume 72 (1-4) Year of Publication 2004 ← Nanometer-scale analysis of current limited stresses impact on SiO2 gate oxide reliability using C-AFM → Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses