Authors M. Porti, G. Ghidini, A. Paccagnella, A. Cester, X. Aymerich, S. Gerardin, i M. Nafría Citation Key 162 COinS Data Date Published 2009 Pagination 421-425 Journal Journal Vacuum Science and Technology B Volume 27(1) Year of Publication 2009 ← Recovery of the MOSFET and circuit functionality after the Dielectric Breakdown of Ultra-Thin High-k Gate Stacks. → Competing degradation mechanisms in short-channel transistors under channel-hot carrier stress at elevated temperatures