Accession Number
WOS:000328588000016
Authors
V. Velayudhan, X. Aymerich, M. Nafría, R. Rodríguez, J. Martín-Martínez, i F. Gámiz
Citation Key
408
COinS Data

Date Published
NOV 2013
DOI
10.1016/j.microrel.2013.07.052
ISSN
0026-2714
Keywords
channel, electrical characteristicss, interface trap, MOSFET, performance, simulation, trap location
Issue
9-11
Pagination
1243-1246
Journal
Microelectronics Reliability
Start Page
1243
Type of Article
Article
URL
http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=2&SID=R2MgRVtjG5XTWRwBNXJ&page=2&doc=14
Volume
53
Year of Publication
2013