Authors R. Rodríguez, X. Aymerich, M. Nafría, i M. Porti Citation Key 250 COinS Data Date Published 2001 Pagination 1011-1013 Journal Microelectronics and Reliability Volume 41 Year of Publication 2001 ← Two-step stress methodology for monitoring the gate oxide degradation in MOS devices → Topographic characterization of AFM grown SiO2 on Si