Accession Number
11873213
Authors
A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, A. Rothschild, i J. Martín-Martínez
Citation Key
363
COinS Data

Date Published
March 2011
DOI
10.1109/TDMR.2010.2098032
ISSN
1530-4388
Keywords
BD recovery, BD reversibility, CMOS, Dielectric Breakdown, dielectric breakdown reversibility, Hafnium compounds, HfSiON, high-k dielectric thin films, injected charge to recovery, MOSFET, reliability, resistive switching, resistive switching behaviour, s
Issue
1
Pagination
126-130
Journal
IEEE Transactions on Device and Materials Reliability
Start Page
126
URL
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5659900
Volume
11
Year of Publication
2011