Authors M. Porti, B. Ebersberger, A. Olbrich, X. Aymerich, M. Nafría, i X. Blasco Citation Key 255 COinS Data Date Published 2001 Pagination 1041-1044 Journal Microelectronics and Reliability Volume 41 Year of Publication 2001 ← Pre-breakdown and post-breakdown switching behaviour of SiO2 breakdown spots observed with C-AFM → Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using Conducting Atomic Force Microscopy