Vés al contingut
- Accession Number
- WOS:000362308000009
- Authors
- V. Iglesias, A. Crodes, G. Bersuker, M. Nafría, M. Porti, i Q. Wu
- Citation Key
- 419
- COinS Data
- Date Published
- November 2015
- DOI
- 10.1016/j.mee.2015.04.058
- ISSN
- 0167-9317 / eISSN (1873-5568)
- Keywords
- ATOMIC-FORCE MICROSCOPY; MOLECULAR-BEAM EPITAXY; CURRENT CONDUCTION; SCHOTTKY CONTACTS; LEAKAGE CURRENT; GAN FILMS; BREAKDOWN; MECHANISMS; TRANSPORT; High mobility substrates; III-V semiconductors; Threading Dislocations; CAFM
- Pagination
- 31-36
- Publication Language
- English
- Publisher
- ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
- Journal
- MICROELECTRONIC ENGINEERING
- Start Page
- 31
- URL
- http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=4&SID=Q13j3klyA7W1Mf8d8CD&page=1&doc=1
- Volume
- 147
- Year of Publication
- 2015