Authors M. Porti, A. Olbrich, B. Ebersberger, X. Aymerich, i M. Nafría Citation Key 257 COinS Data Date Published 2001 Pagination 265-269 Journal Microelectronic Engineering Volume 59 Year of Publication 2001 ← Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using Conducting Atomic Force Microscopy → Failure physics of ultra-thin SiO2 gate oxides near their scaling limit