Authors R.Rodríguez, X. Aymerich, M. Nafría, J. Suñé, R. Pau, i E. Miranda Citation Key 261 COinS Data Date Published 2000 Pagination 707-710 Journal Microelectronics and Reliability Volume 40 Year of Publication 2000 ← Conduction properties of breakdown paths in ultrathin gate oxides → Monitoring the degradation that causes the breakdown of ultrathin (<5nm) SiO2 gate oxides