Accession Number
WOS:000297182700025
Authors
A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, A. Rothschild, i J. Martín-Martínez
Citation Key
378
COinS Data

Date Published
November 2011
DOI
10.1016/j.sse.2011.06.033
ISSN
0038-1101
Keywords
dielectric breakdown reversibility, high-k, Leakage current, MOS devices, reliability, resistive switching, Silicon
Pagination
157-162
Journal
SOLID-STATE ELECTRONICS
Start Page
157
Type of Article
Article; Proceedings Paper
URL
http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=2&SID=R2tTlR5F1OPdD3gzcxU&page=1&doc=5
Volume
65-66
Year of Publication
2011