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- Accession Number
- WOS:000328588000017
- Authors
- A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, i J. Martín-Martínez
- Citation Key
- 379
- COinS Data
- Date Published
- NOV 2013
- DOI
- 10.1016/j.microrel.2013.07.046
- ISSN
- 0026-2714
- Keywords
- breakdown reversibility, BREAKDOWN; CONDUCTION; dielectric Breakdown, CMOS, high-k, MOS technology, reliability, resistive switching, Ultra-thin dielectric gate stacks
- Issue
- 9-11
- Pagination
- 1247-1251
- Journal
- MICROELECTRONICS RELIABILITY
- Start Page
- 1247
- Type of Article
- Article
- URL
- http://www.sciencedirect.com/science/article/pii/S0026271413002217
- Volume
- 53
- Year of Publication
- 2013