Authors M. Porti, X. Aymerich, M. Nafría, y S. Meli Citation Key 241 COinS Data Date Published 2003 Pagination 1203-1209 Journal Microelectronics and Reliability Volume 43/8 Year of Publication 2003 ← Electrical characterization and fabrication of SiO2 based MOS nanoelectronic devices with atomic force microscopy → Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM