Authors R. Rodríguez, X. Aymerich, J. Suñé, M. Nafría, y E. Miranda Citation Key 249 COinS Data Date Published 2001 Pagination 1317-1325 Journal Solid State Electronics Volume 45 Year of Publication 2001 ← Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides → Influence of a low field with opposite polarity to the stress on the degradation of 4.5nm thick SiO2 films