Accession Number
13356803
Authors
J. Martín-Martínez, X. Aymerich, M. Nafría, R. Rodríguez, y N. Ayala
Citation Key
359
COinS Data

Date Published
2012
DOI
10.1109/ICSICT.2012.6467575
ISBN
978-1-4673-2474-8
Keywords
atomic level, bias temperature instability, BTI degradation, BTI related VT shifts, circuit aging evaluation, defect charge-discharge, design phase, discrete threshold voltage shift, field effect transistor, PDO model, probabilistic defect occupancy model
Pagination
1-4
Conference Location
Xi'an, China
Conference Name
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6467575
Year of Conference
2012