BTI and Dielectric Breakdown in high-k gated NMOS transistors studied using DC and Fast Measurements

Authors

J. Boix, X. Aymerich, M. Nafría, R. Rodríguez, y J. Martín-Martínez

Citation Key

184

COinS Data

Date Published

2008

Journal

Proc. European Solid State Devices and Research Conference

Start Page

16

Year of Publication

2008