Authors X. Blasco, W. Vandervorst, O. Richard, X. Aymerich, M. Nafría, y J.Pétry Citation Key 232 COinS Data Date Published 2004 Pagination 191-196 Journal Microelectronic Engineering Volume 72 (1-4) Year of Publication 2004 ← Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale → Nanometer-scale analysis of current limited stresses impact on SiO2 gate oxide reliability using C-AFM