Authors L. Aguilera, X. Aymerich, M. Nafría, y M. Porti Citation Key 219 COinS Data Date Published 2006 Issue 3 Pagination 157-159 Journal IEEE Electron Device Letters Volume 27 Year of Publication 2006 ← AC NBTI studied in the 1 Hz – 2 GHz range on dedicated on-chip CMOS circuits → Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometer scale with CAFM