Authors W. Polspoel, X. Aymerich, M. Nafría, M.Porti, L. Aguilera, y W. Vandervorst Citation Key 171 COinS Data Date Published 2009 Pagination 356-359 Journal Journal Vacuum Science and Technology B Volume 27(1) Year of Publication 2009 ← Development of a Conductive Atomic Force Microscope with a logarithmic current-to-voltage converter for the study of MOS gate dielectrics reliability → Contributions of the gate current and channel current variation to the post-breakdown MOSFET performance