Authors
Q. Wu, E. Simoen, M B González, X. Aymerich, M. Nafría, V. Velayudhan, R. Rodríguez, M. Lanza, J. Martín-Martínez, M. Porti, y A. Bayerl
Citation Key
380
COinS Data

Date Published
19 August 2014
DOI
10.1109/TED.2014.2341315
ISSN
0018-9383
Keywords
Atomic force microscopy (AFM), channel hot-carrier (CHC) degradation, Current measurement, degradation, dielectrics, logic gates, MOSFET, Nanoscale devices, negative bias temperature instability (NBTI), stress
Issue
9
Pagination
3118-3124
Journal
Electron Devices, IEEE Transactions on
Start Page
3118
Type of Article
Article
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6880443
Volume
61
Year of Publication
2014