Authors R. Fernández, X. Aymerich, M. Nafría, y R. Rodríguez Citation Key 230 COinS Data Date Published 2005 Issue 6 Pagination 368-370 Journal Electronic Letters Volume 41 Year of Publication 2005 ← Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics → Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale