Accession Number
16998247
Authors
C. Couso, X. Aragones, D. Mateo, E. Barajas, R. Castro-López, E. Roca, F. V. Fernández, M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, y J. Díaz-Fortuny
Citation Key
436
COinS Data

Date Published
July 2017
DOI
10.1109/ULIS.2017.7962608
ISBN Number
2472-9132
Keywords
channel dimension, charges, device variability, fitting, Geometry, Mathematical model, MOSFET, MOSFET threshold voltage variability, Pelgrom rule, Pelgrom's law, Semiconductor process modeling, TCAD simulation, Threshold voltage, variability
Conference Location
Athens, Greece
Publisher
IEEE
Conference Name
Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on
URL
http://ieeexplore.ieee.org/document/7962608/
Year of Publication
2017