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- Accession Number
- 10878814
- Authors
- A. Gasperin, A. Paccagnella, X. Aymerich, M. Nafría, J. Martín-Martínez, M. Porti, y E. Amat
- Citation Key
- 368
- COinS Data
- Date Published
- September 2009
- DOI
- 10.1109/TED.2009.2028404
- ISSN
- 0018-9383
- Keywords
- 2D TCAD simulation, charge trapping, circuit CAD, circuit simulation, extrapolation, FG, flash memories, floating gate, floating-gate flash memory cell, Leakage current, nanocrystal memory cells, nanotechnology, NC, NCMs, nonvolatile memories, phase chang
- Issue
- 10
- Pagination
- 2319-2326
- Journal
- IEEE Transactions on Device and Materials Reliability
- Start Page
- 2319
- URL
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5238630&sortType%3Ddesc_p_Publication_Year%26pageNumber%3D2%26queryText%3DMartin-Martinez
- Volume
- 56
- Year of Publication
- 2009