Authors X. Blasco, W. Vandervorst, J. Pétry, X. Aymerich, M. Nafría, y M. Porti Citation Key 221 COinS Data Date Published 2005 Pagination 1506-1511 Journal Nanotechnology Volume 16 Year of Publication 2005 ← Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometer scale with CAFM → Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by Enhanced-CAFM