Accession Number
WOS:000391049500010
Authors
Q. Wu, X. Aymerich, M. Nafría, M. Porti, y S. Claramunt
Citation Key
447
COinS Data

DOI
0.1504/IJNT.2016.079666
ISSN
1475-7435 (eISSN: 1741-8151)
Keywords
resistive random access memory; RRAM; grapheme; resistive switching; high-k dielectrics
Pagination
634-641
Journal
International Journal Nanotechnology
Start Page
634
URL
http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=V1gx2EI69eRxuZkl2PY&page=1&doc=1
Volume
13
Year of Publication
2016