Saltar al contenido
- Accession Number
- WOS:000391049500010
- Authors
- Q. Wu, X. Aymerich, M. Nafría, M. Porti, y S. Claramunt
- Citation Key
- 447
- COinS Data
- DOI
- 0.1504/IJNT.2016.079666
- ISSN
- 1475-7435 (eISSN: 1741-8151)
- Keywords
- resistive random access memory; RRAM; grapheme; resistive switching; high-k dielectrics
- Pagination
- 634-641
- Journal
- International Journal Nanotechnology
- Start Page
- 634
- URL
- http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=V1gx2EI69eRxuZkl2PY&page=1&doc=1
- Volume
- 13
- Year of Publication
- 2016