Saltar al contenido
- Authors
- A. Fontsere, M. Nafría, M. Lanza, A. Bayerl, M. Porti, V. Iglesias, J. C. Moreno, Y. Cordier, S. Chenot, N. Baron, J. Llobet, M. Placidi, y A. Perez-Tomas
- Citation Key
- 373
- COinS Data
- Date Published
- August 2012
- DOI
- 10.1063/1.4748115
- ISSN
- 0003-6951
- Keywords
- AFM, aluminium compounds, Atomic force microscopy, Dielectric Breakdown, dielectric materials, element semiconductors, field emission, gallium compounds, high electron mobility transistors, III-V semiconductors, leakage currents, nanotechnology, reliabili
- Issue
- 9
- Pagination
- 093505-093505-4
- Journal
- Applied Physics Letters
- Start Page
- 093505
- URL
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6291673&sortType%3Ddesc_p_Publication_Year%26queryText%3DV.+Iglesias
- Volume
- 101
- Year of Publication
- 2012