Influence of the SiO2 layer thickness on the degradation de HfO2/SiO2 stacks subjected to static and dynamic stress conditions

Authors

E. Amat, J.H. Stathis, X. Aymerich, M. Nafría, y R. Rodríguez

Citation Key

212

COinS Data

Date Published

2007

Issue

4-5

Pagination

544-547

Journal

Microelectronics Reliability

Volume

47

Year of Publication

2007