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- Accession Number
- 11873213
- Authors
- A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, A. Rothschild, y J. Martín-Martínez
- Citation Key
- 363
- COinS Data
- Date Published
- March 2011
- DOI
- 10.1109/TDMR.2010.2098032
- ISSN
- 1530-4388
- Keywords
- BD recovery, BD reversibility, CMOS, Dielectric Breakdown, dielectric breakdown reversibility, Hafnium compounds, HfSiON, high-k dielectric thin films, injected charge to recovery, MOSFET, reliability, resistive switching, resistive switching behaviour, s
- Issue
- 1
- Pagination
- 126-130
- Journal
- IEEE Transactions on Device and Materials Reliability
- Start Page
- 126
- URL
- http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5659900
- Volume
- 11
- Year of Publication
- 2011