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- Accession Number
- WOS:000400413200027
- Authors
- C. Couso, M. Nafría, N. Seoane, A. J. Garcia-Loureiro, J. Martín-Martínez, y M. Porti
- Citation Key
- 434
- COinS Data
- Date Published
- May 2017
- DOI
- DOI:10.1109/LED.2017.2680545
- ISSN
- 0741-3106 (eISSN: 1558-0563)
- Keywords
- CAFM, HfO2, high-k, KPFM, MOSFET, NM, polycrystalline dielectric, SIMULATIONS, transistors
- Pagination
- 637-640
- Journal
- IEEE Electron Device Letters
- Start Page
- 637
- URL
- http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=W2AD7bZyrMVqntOuSYl&page=1&doc=1
- Volume
- 38
- Year of Publication
- 2017