Authors M. Porti, X. Aymerich, y M. Nafría Citation Key 233 COinS Data Date Published 2004 Pagination 55-60 Journal IEEE Transactions on Nanotechnology Volume 3(1) Year of Publication 2004 ← C-AFM Characterization of the Dependence of HfAlOx Electrical Behavior on Post Deposition Annealing Temperature → Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides