Accession Number
13399060
Authors
A. Crespo-Yepes, M. Lanza, X. Aymerich, M. Nafría, M. Porti, R. Rodríguez, V. Iglesias, y J. Martín-Martínez
Citation Key
354
COinS Data

Date Published
February 2013
DOI
10.1109/CDE.2013.6481397
ISBN Number
978-1-4673-4666-5
Keywords
conductive atomic force microscopy, device level analysis, Hf, high resistive state, high-k dielectric materials, interchangeable conductivity states, local dielectric properties, low resistive state, MOSFET, ReRAM, resistive switching phenomenon, RS-rela
Conference Location
Valladolid, Spain
Conference Name
2013 Spanish Conference on electron Devices (CDE)
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6481397
Year of Publication
2013